| PART |
Description |
Maker |
| IRG4PC50UD IRG4PC50UD-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| APT4016BVR |
POWER MOS V 400V 27A 0.160 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT8030LVFR APT8030LVFRG |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| APT5018BLL APT5018SLL |
POWER MOS 7 500V 27A 0.180 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| IRGPC40FD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| RJK4515DPK-00T0 RJK4515DPK-12 |
450V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HGTP12N60B3D HGT1S12N60B3DS |
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 470uF; Voltage: 25V; Case Size: 10x12.5 mm; Packaging: Bulk
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| APT6011B2VFR |
POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6030BVR APT6030 |
POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6015LVFR |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6013JVR |
POWER MOS V 600V 40A 0.130 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
